epitaxial graphene on SiC
The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics FREE-DOWNLOAD G Gu – Solid State Communications, We fabricated high-mobility field-effect transistors based on epitaxial graphene synthesized by vacuum graphitization of both the Si- and C-faces of SiC. Room-temperature field-effect mobilities >4000 cm 2 /V s for both electrons and holes were achieved, […]
Computational study of tunneling transistor based on graphene nanoribbon
FREE-DOWNLOAD P Zhao, J Chauhan… – Nano letters, 2009 Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass
dual-gated graphene field-effect transistor
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric FREE-DOWNLOADS Kim, J Nah, I Jo, D Shahrjerdi… – Applied Physics …, 2009 We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices […]